AOT11N60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V,11A N-Channel MOSFET

AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
General Description
The AOT11N60 & AOTF11N60 have been fabricated using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing
low R_DS(on), C_iss and C_rss along with guaranteed avalanche capability these parts can be adopted quickly into new
and existing offline power supply designs.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
700V@150℃
11A
< 0.65Ω
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
AOT11N60
11
8
272
2.2
AOT11N60
65
0.5
0.46
G
S
AOTF11N60
600
±30
11*
8*
39
4.8
345
690
5
50
0.4
-55 to 150
300
AOTF11N60
65
--
2.5
AOTF11N60L
11*
8*
37.9
0.3
AOTF11N60L
65
--
3.3
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
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