AOP609 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOP609
Complementary Enhancement
Mode Field Effect Transistor
General Description
The AOP609 uses advanced trench technology MOSFETs to provide excellent R_DS(ON) and low
gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other
applications. Standard Product AOP609 is Pb- free (meets ROHS & Sony 259 specifications).
Features
n-channel
p-channel
V_DS (V) = 60V
-60V
I_D = 4.7A (V_GS=10V) -3.5A (V_GS=-10V)
R_DS(ON)
R_DS(ON)
< 60mΩ (V_GS=10V)
< 115mΩ (V_GS =-10V)
< 75mΩ (V_GS=4.5V)
< 140mΩ (V_GS =-4.5V)
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
PDIP-8
D2
D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
4.7
Current ^A
T_A=70°C
I_D
3.8
Pulsed Drain Current ^B
I_DM
20
T_A=25°C
P_D
2.5
Power Dissipation T_A=70°C
1.6
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
Symbol
R_θJA
Device
n-ch
n-ch
Maximum Junction-to-Lead ^C
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Steady-State
t ≤ 10s
Steady-State
R_θJL
R_θJA
n-ch
p-ch
p-ch
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
p-ch
Max p-channel
-60
±20
-3.5
-2.9
-20
2.5
1.6
-55 to 150
Typ Max
37
50
74
90
28
40
35
50
73
90
32
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
1/7
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