AOP605 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOP605
Complementary Enhancement Mode
Field Effect Transistor
General Description
The AOP605 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Standard Product AOP605 is Pb-free (meets ROHS & Sony 259 specifications). AOP605L is a Green
Product ordering option. AOP605 and AOP605L are electrically identical.
Features
n-channel
p-channel
V_DS (V) = 30V
-30V
I_D = 7.5A (V_GS = 10V) -6.6A (V_GS = -10V)
R_DS(ON)
< 28mΩ (V_GS = 10V) < 35mΩ (V_GS = -10V)
< 43mΩ (V_GS = 4.5V) < 58mΩ (V_GS = -4.5V)
D2
D1
S2 1 8 D2
G2 2 7 D2
S1 ^{3 6} D1
G1 ^{4 5} D1
PDIP-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
7.5
Current ^A
T_A=70°C
I_D
6
Pulsed Drain Current ^B
I_DM
30
Power Dissipation
T_A=25°C
T_A=70°C
P_D
2.5
1.6
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
40
67
50
80
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
33
40
Thermal Characteristics: p-channel
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
38
66
50
80
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
30
40
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
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