AON7934 Datasheet, PDF (1/10 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel AlphaMOS

AON7934
30V Dual Asymmetric
N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (MOS LV) technologyα
• Very Low RDS(on) at 4.5V_GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Features
Q1
Q2
V_DS
30V
30V
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
16A
18A
<10.2mΩ <7.7mΩ
<15.8mΩ <11.6mΩ
100% UIS Tested
100% Rg Tested
Top View
Bottom View
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche Energy L=0.05mH ^C
E_AS
V_DS Spike
100ns
V_SPIKE
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Max Q1
Max Q2
30
±20
±20
16
18
12
14
64
72
13
15
7.8
9
19
25
3.0
4.1
36
36
23
25
9
10
2.5
2.5
0.9
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
40
70
4.5
Max Q1
50
90
5.4
Typ Q2
40
70
4.2
Max Q2
50
90
5
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
1 / 10
www.freescale.net.cn