AON7932 Datasheet, PDF (1/11 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel MOSFET

AON7932
30V Dual Asymmetric
N-Channel MOSFET
General Description
The AON7932 is designed to provide a high efficiency synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized MOSFETs in a dual Power DFN3x3A package. The Q1
"High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET use advance trench
technology with a monolithically integrated Schotty to provide excellent RDS(ON) and low gate charge. The
AON7932 is well suited for use in compact DC/DC converter applications.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
26A
<20mΩ
<30mΩ
Q2
30V
35A
<12mΩ
<15mΩ
Top View
Bottom View
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche Energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Max Q1
Max Q2
30
±20
±12
26
35
16
22
70
110
6.6
8.1
5.3
6.5
18
17
16
14
23
25
9
10
1.4
1.4
0.9
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
40
70
4.5
Max Q1
50
90
5.4
Typ Q2
40
70
4.2
Max Q2
50
90
5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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