AON7900 Datasheet, PDF (1/10 Pages) Alpha & Omega Semiconductors – 30V Dual Asymmetric N-Channel MOSFET

AON7900
30V Dual Asymmetric N-Channel MOSFET
General Description
The AON7900 is designed to provide a high efficiency synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized MOSFETs in a dual Power DFN3.3x3.3 package. The Q1
"High Side" MOSFET is designed to minimize switching _{losses. The Q2 "Low Side" MOSFET is designed for low}
R DS(ON) _{to reduce conduction losses. The AON7900 is well suited for use in compact DC/DC converter applications.}
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
Q1
30V
24A
<21mΩ
<28mΩ
Q2
30V
40A
<6.7mΩ
<8.5mΩ
100% UIS Tested
100% Rg Tested
Top View
Bottom View
8
G2
S2
7
6
S2
5
S2
D2/S1
1
G1
2
D1
3 _D1
4 _D1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
24
40
15
31
Pulsed Drain Current ^C
I_DM
90
150
Continuous Drain
Current
T_A=25°C
T_A=70°C
8
I_DSM
6
13
10
Avalanche Current ^C
I_AS, I_AR
22
28
Avalanche Energy L=0.1mH ^C
E_AS, E_AR
24
39
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
17
7
50
20
T_A=25°C
Power Dissipation ^A T_A=70°C
1.8
1.8
P_DSM
1.1
1.1
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Typ Q1
27
60
6
Typ Q2
27
60
2
Max Q1 Max Q2
35
35
72
72
7.5
2.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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