AON7418 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel AlphaMOS

AON7418
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (α MOS LV) technology • Very Low RDS(on) at 4.5V _GS
• Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom anadl Industri
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
30V
50A
< 1.7mΩ
< 2.8mΩ
100% UIS Tested
100% R_g Tested
D
Top View
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.05mH ^C
E_AS
V_DS Spike
100ns
V_SPIKE
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Maximum
30
±20
50
39
200
46
37
66
109
36
83
33
6.2
4
-55 to 150
Typ
Max
16
20
45
55
1.1
1.5
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
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