AON7408 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON7408
30V N-Channel MOSFET
General Description
The AON7408 uses advanced trench technology and design to provide excellent R_DS(ON) with low gate
charge. This device is suitable for use in general purpose applications.
Features
V_DS (V) = 30V
I_D = 23A
(V_GS = 10V)
R_DS(ON) < 20mΩ (V_GS = 10V)
R_DS(ON) < 32mΩ (V_GS = 4.5V)
Top View
1
8
2
7
3
6
4
5
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^B
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current ^A
T_A=25°C
T_A=70°C
I_DSM
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
23
15
64
10
8
16.7
7
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
25
62
40
75
Maximum Junction-to-Case ^B
Steady-State
R_θJC
6.2
7.5
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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