AON7405 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V P-Channel MOSFET

AON7405
30V P-Channel MOSFET
General Description
The AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery pr otection applications.
Product Summary
V_DS
I_D (at V_GS= -10V)
R_DS(ON) (at V_GS= -10V)
R_DS(ON) (at V_GS = -6V)
-30V
-50A
< 6.2mΩ
< 8.9mΩ
100% UIS Tested
100% R_g Tested
Top View
D
1
8
2
7
3
6
4
5
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Repetitive avalanche energy L=0.1mH ^C
I_DSM
I_AR, I_AS
E_AR, E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
G
S
Maximum
-30
±25
-50
-39
-210
-25
-20
-44
97
83
33
6.25
4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
16
45
Maximum Junction-to-Case
Steady-State
R_θJC
1.1
Max
20
55
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
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