AON7403 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AON7403
30V P-Channel MOSFET
General Description
The AON7403 uses advanced trench technology to ^{provide excellent R} , DS(ON) and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS=-5V)
-30V
-29A
< 18mΩ
< 36mΩ
D
Top View
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±25
-29
-18
-80
-11
-8.5
24
29
25
10
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
30
60
Maximum Junction-to-Lead
Steady-State
R_θJL
4.2
Max
40
75
5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/5
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