AON6458 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 250V,14A N-Channel MOSFET

AON6458
250V,14A N-Channel MOSFET
General Description
The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of
performance and robustness in popular AC-DC applications.By providing low R , DS(on) Ciss and Crss along with
guaranteed avalanche capability this device can beadopted ^{quickly into new and existing offline power supply}
designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
300V@150℃
14A
< 0.17Ω
g
Top View
1
8
2
7
3
6
4
5
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
Avalanche Current ^C
T_A=25°C
T_A=70°C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^H
Peak diode recovery dv/dt
I_DSM
I_AR
E_AR
E_AS
dv/dt
Power Dissipation ^B
T_C=25°C
T_C=100°C
P_D
Power Dissipation ^A
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
D
G
S
Maximum
250
±30
14
8.8
42
2.2
1.7
4.5
304
608
5
83
33
2
1.25
-50 to 150
Typ
Max
24
30
53
64
1
1.5
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W
W
°C
Units
°C/W
°C/W
°C/W
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