AON6442 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 40V N-Channel MOSFET

AON6442
40V N-Channel MOSFET
General Description
The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are minimized due to an extremely low combination of R_DS(ON)
and Crss .In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
40V
32A
< 4.8mΩ
< 7mΩ
100% UIS Tested
100% R_g Tested
Top View
1
8
2
7
3
6
4
5
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Maximum
40
±20
65
42
168
22
18
40
80
35.7
14
4.2
2.7
-55 to 150
Typ
Max
25
30
55
65
2.6
3.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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