AON6426 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – DFN 5X6 PACKAGE MARKING DESCRIPTION

AON6426
30V N-Channel MOSFET
General Description
The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R_{DS(ON). This device is ideal for load switch and battery protection applications.}
Features
V_DS (V) = 30V
I_D = 65A
R_DS(ON) < 5.5mΩ
R_DS(ON) < 7.5mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
65
43
130
14
11
42
88
42
17
2
1.2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
24
53
Max
30
64
Maximum Junction-to-Case
Steady-State
R_θJC
2.6
3
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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