AON6407 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V P-Channel MOSFET

AON6407
30V P-Channel MOSFET
General Description
The AON6407 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R _{. DS(ON) This device is ideal for load switch and battery protection applications.}
Features
V_DS
I_D (at V_GS= -10V)
R_DS(ON) (at V_GS= -10V)
R_DS(ON) (at V_GS = -6V)
-30
-85A
< 4.5mΩ
< 6.0mΩ
Top View
1
8
2
7
3
6
4
5
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±25
-85
-67
-200
-32
-25.5
45
101
83
33
7.3
4.7
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
14
40
Maximum Junction-to-Case
Steady-State
R_θJC
1.1
Max
17
55
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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