AON6404 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON6404
30V N-Channel MOSFET
General Description
The AON6404 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R_{DS(ON). This device is ideal for load switch and battery protection applications.}
Features
V_DS (V) = 30V
I_D = 85A (V_GS = 10V)
R_DS(ON) < 2.2mΩ (V_GS = 10V)
R_DS(ON) < 3.8mΩ (V_GS = 4.5V)
Top View
1
8
2
7
G
3
6
4
5
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current ^B,G
T_C=100°C
I_D
Pulsed Drain Current
I_DM
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_DSM
Avalanche Current
I_AS
Single avalanche energy L=0.1mH
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
85
67
160
25
20
85
361
83
33
2.1
1.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
15
45
20
60
Maximum Junction-to-Case ^C
Steady-State
R_θJC
1.1
1.5
D
S
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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