AON6242 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 60V N-Channel MOSFET

AON6242
60V N-Channel MOSFET
General Description
The AON6242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hi gh
frequency switching performance.Power losses are minimized due to an extremely low combination of
R_{DS(ON) and Crss.In addition,switching behavior is well controlled with a soft recovery body diode.This dev ice is}
ideal for boost converters and synchronous rectifie rs for consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
60V
85A
< 3.6mΩ
< 4.5mΩ
100% UIS Tested
100% R_g Tested
D
Top View
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
60
±20
85
66
240
18.5
14.5
75
281
83
33
2.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
14
40
Maximum Junction-to-Case
Steady-State
R_θJC
1
Max
17
55
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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