AON6236 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 40V N-Channel MOSFET

AON6236
40V N-Channel MOSFET
General Descrion
The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hi gh
frequency switching performance.Power losses are minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery bo dy
diode.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
40V
30A
< 7mΩ
< 10.5mΩ
100% UIS Tested
100% R_g Tested
D
Top View
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AS
Avalanche energy L=0.1mH ^C
E_AS
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
40
±20
30
24
120
19
15
33
54
39
15.5
4.2
2.7
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
24
53
Maximum Junction-to-Case
Steady-State
R_θJC
2.6
Max
30
64
3.2
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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