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AON6234 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 40V N-Channel MOSFET
AON6234
40V N-Channel MOSFET
General Description
The AON6234 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hi gh
frequency switching performance.Power losses are minimized due to an extremely low combination of
RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery bo dy
diode.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
40V
85A
< 3.4mΩ
< 5.0mΩ
100% UIS Tested
100% Rg Tested
Top View
1
8
2
7
3
6
4
5
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
85
67
220
20
15
50
125
83
33
2.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
14
40
Maximum Junction-to-Case
Steady-State
RθJC
1.1
Max
17
55
1.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
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