AON6200L Datasheet, PDF (1/6 Pages) –

AON6200L
30V N-Channel MOSFET
General Description
The AON6200L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance. Conduction and switching losses are minimized due to an extremely low
combination of R_{DS(ON) and Crss.}
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
30V
24A
< 7.8mΩ
< 11mΩ
100% UIS Tested
100% R_g Tested
Top View
D
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
24
18
130
13
10
28
39
35
14
1.95
1.25
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
25
55
Maximum Junction-to-Case
Steady-State
R_θJC
2.6
Max
30
64
3.5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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