AON5810 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON5810
Common-Drain Dual N-Channrl Enhancement
Mode Field Effect Transistor
General Description
The AON5810 uses advanced trench technology to provide excellent R^DS(ON) , low gate charge and
operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) _{rating. It is ESD protected. This}
device is suitable for use as a uni-directional or bi- directional load switch, facilitated by its common-drain
configuration. _{Standard Product AON5810 is Pb-free (meets ROHS & Sony 259 specifications). AON5810L}
is a Green Product ordering option. AON5810 and AON5810L are electrically identical.
Features
V_DS (V) = 20V
I_D = 7.7 A (V_GS = 4.5V)
R_DS(ON) < 18 mΩ (V_GS = 4.5V)
R_DS(ON) < 19 mΩ (V_GS = 4.0V)
R_DS(ON) < 21 mΩ (V_GS = 3.1V)
R_DS(ON) < 25 mΩ (V_GS = 2.5V)
R_DS(ON) < 40 mΩ (V_GS = 1.8V)
ESD Rating: 2000V HBM
DFN 2X5
S1
S1
G1
S2
S2
G2
D1/D2
Top View
S2
S2
G2
S1
S1
G1
Bottom View
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current R_θJA=75°C/W
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation ^{A T}A^=25°C
R_θJA=75°C/W
T_A=70°C
Junction and Storage Temperature Range
P_DSM
T_J, T_STG
Maximum
20
±12
7.7
6.1
30
1.6
1.0
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
30
61
Steady-State
R_θJC
4.5
Max
40
75
6
Units
V
A
W
°C
Units
°C/W
°C/W
°C/W
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