AON4805L Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AON4805L
Dual P-Channel Enhancement Mode
Field Effect Transistor
General Description
The AON4805L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications.
-RoHS Compliant
-Halogen Free
Features
V_DS (V) = -20V
I_D = -4.5A
(V_GS = -4.5V)
R_DS(ON) < 65mΩ (V_GS = -4.5V)
R_DS(ON) < 85mΩ (V_GS = -2.5V)
R_DS(ON) < 115mΩ (V_GS = -1.8V)
Top View
DFN 3x2
Bottom View
Pin 1
S1 1 8 D1
G1 ^{2 7} D1
S2 ^{3 6} D2
G2 ^{4 5 D2}
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
MOSFET
-20
±8
-4.5
-3.5
-25
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^AD Steady-State
R_θJA
50
84
60
100
Maximum Junction-to-Lead
Steady-State
R_θJL
28
34
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/5
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