AON4803 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AON4803
20V Dual P-Channel MOSFET
General Description
The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) . This device is ideal for load switch _{and battery protection applications.}
Product Summary
V_DS
I_D (at V_GS=-4.5V)
R_DS(ON) (at V_GS=-4.5V)
R_DS(ON) (at V_GS =-2.5V)
R_DS(ON) (at V_GS =-1.8V)
-20V
-3.4A
< 90mΩ
< 120mΩ
< 165mΩ
Top View
D1
D2
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-20
±8
-3.4
-2.7
-15
1.7
1.1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
51
88
Maximum Junction-to-Lead
Steady-State
R_θJL
28
Max
75
110
35
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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