AON4703 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AON4703
20V P-Channel MOSFET with Schottky Diode
General Description
The AON4703 uses advanced trench technology to prov _{ide excellent R} DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidi rectional blocking switch, or for buck converter applications
Features
V_DS (V) = -20V
I_D = -3.4A (V_GS = -4.5V)
R_DS(ON) < 90mΩ (V_GS = -4.5V)
R_DS(ON) < 120mΩ (V_GS = -2.5V)
R_DS(ON) < 160mΩ (V_GS = -1.8V)
SCHOTTKY
V_KA (V) = 20V, I_F = 1A, V_F<0.5V @ 1A
DFN 3x2
Top View
Bottom
Pin 1
A 18K
A ²⁷K
S ³⁶D
G ⁴⁵D
D
K
G
S
A
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^A
Pulsed Drain Current ^B
T_A=25°C
T_A=70°C
I_D
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current ^A
Pulsed Forward Current ^B
T_A=25°C
T_A=70°C
I_F
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
MOSFET
-20
±8
-3.4
-2.7
-15
1.7
1.1
-55 to 150
Typ
51
88
28
66
95
40
Schottky
20
1.9
1.2
7
0.96
0.62
-55 to 150
Max
75
110
35
80
130
50
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
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