AON4605 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – 30V Complementary MOSFET

AON4605
30V Complementary MOSFET
General Description
The AON4605 uses advanced trench technology to provide excellent R_{DS(ON) and low gate charge. The}
complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Features
N-Channel
P-Channel
V_DS= 30V
-30V
I_D= 4.3A (V_GS=10V)
-3.4A (V_GS=-10V)
R_DS(ON)
R_DS(ON)
< 50mΩ (V_GS=10V)
< 110mΩ (VGS=-10V)
< 70mΩ (V_GS=4.5V)
< 180mΩ (VGS=-4.5V)
D1
D2
Top View
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
V_DS
30
-30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
4.3
-3.4
I_D
3.4
-2.7
I_DM
18
-13
T_A=25°C
Power Dissipation ^B T_A=70°C
1.9
1.9
P_D
1.2
1.2
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
51.5
82
40
Max
65
100
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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