AON4413 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AON4413
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON4413 uses advanced trench technology to provide excellent R_DS(ON) with low gate charge. This
device is suitable for use as a load switch or in PWM applications. Standard product AON4413 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
V_DS (V) = -30V
I_D = -6.5A
(V_GS = -10V)
R_DS(ON) < 46mΩ (V_GS = -10V)
R_DS(ON) < 60mΩ (V_GS = -6V)
DFN 3x2
D
D
D
D
D
D
D
G
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
-6.5
-4.7
I_D
-5.3
-3.7
I_DM
-25
Power Dissipation ^{A TA=25°C}
T_A=70°C
3.1
1.6
P_D
2.0
1.0
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
34
66
Maximum Junction-to-Lead ^C
Steady State
R_θJL
20
Max
40
80
25
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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