AON3814 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON3814
20V N-Channel MOSFET
General Description
The AON3814 uses advanced trench technology to provide excellent R_DS(ON) , low gate charge and operation
with gate voltages as low as 1.8V while retaining a 12V V_GS(MAX) rating. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
V_DS
I_D (at V_GS=4.5V)
R_DS(ON) (at V_GS = 4.5V)
R_DS(ON) (at V_GS = 4V)
R_DS(ON) (at V_GS = 3.1V)
R_DS(ON) (at V_GS = 2.5V)
20V
6A
< 17mΩ
< 18.5mΩ
< 23mΩ
< 24mΩ
ESD Protected
Top View
S2 ₁
8
G2 ₂
7
S1 _{3 6}
G1 _{4 5}
D2
D2 ^G1
D1
D1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^F
T_C=25°C
T_C=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_C=25°C
Power Dissipation ^F T_C=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
D1
G2
S1
Maximum
20
±12
6
5.3
40
2.5
1.6
-55 to 150
D2
S2
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
40
75
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
30
Max
Units
50
°C/W
95
°C/W
40
°C/W
1/5
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