AON3806 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON3806
20V Dual N-Channel MOSFET
General Description
The AON3806 uses advanced trench technology to provide excellent R_DS(ON) , low gate charge and
operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain
configuration.
Features
V_DS
I_D (at V_GS=4.5V)
R_DS(ON) (at V_GS=4.5V)
R_DS(ON) (at V_GS =4.0V)
R_DS(ON) (at V_GS =2.5V)
20V
6A
< 22mΩ
< 24mΩ
< 33mΩ
Top View
S2 ¹
G2 ²
S1 ³
G1 4
8 D2
7 D2
6 D1
5 D1
D1
G1
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
D2
G2
S2
Maximum
20
±12
6
4.7
24
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
40
75
Maximum Junction-to-Lead
Steady-State
R_θJL
30
Max
50
95
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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