AON3611 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – 30V Complementary MOSFET

AON3611
30V Complementary MOSFET
General Description
The AON3611 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. The
complementary MOSFETs may be used in inverter and other applications.
Features
N-channel
V_DS (V) = 30V
I_D = 5A
R_DS(ON) < 50mΩ
R_DS(ON) < 70mΩ
P-channel
V_DS (V) = -30V
I_D = -6A
R_DS(ON) < 38mΩ
R_DS(ON) < 62mΩ
(V_GS = ±10V)
(V_GS = ±10V)
(V_GS = ±4.5V)
Top View
S2
G2
S1
G1
D2
D2
D2
D1
D1 G2
S2
N-channel
D1
G1
S1
P-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max N-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
5
I_D
3.8
I_DM
20
T_A=25°C
Power Dissipation ^B T_A=70°C
2.1
P_D
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Max P-channel
-30
±20
-6
-4.7
-30
2.5
1.6
-55 to 150
Thermal Characteristics: N-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
50
80
Maximum Junction-to-Lead
Steady-State
R_θJL
48
Thermal Characteristics: P-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
40
70
Maximum Junction-to-Lead
Steady-State
R_θJL
38
Max
60
98
58
Max
50
85
46
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
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