AON3408 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON3408
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON3408 uses advanced trench technology toprovide excellent R_{DS(ON) and low gate charge. This}
device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used to bypass the source inductance. Standard
Product AON3408 is Pb-free (meets ROHS & Sony 259 specifications).
Features
V_DS (V) = 30V
I_D =11A (V_GGSS = 10V)
R_DS(ON) < 14.5mΩ (V_GS = 10V)
R_DS(ON) < 18mΩ (V_GS = 4.5V)
R_DS(ON) < 45mΩ (V_GS = 2.5V)
D
S
D
S
D
S
D
G
G
D
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±12
8.5
7.2
40
3.0
1.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
32
65
42
100
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
25
35
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
°C/W
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