AON3402 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AON3402
20V N-Channel MOSFET
General Description
The AON3402 uses advanced trench technology to provide excellent R_DS(ON) , low gate charge and
operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX)rating.This device is suitable
for use as load switch and general purpose FET application.
Product Summary
V_DS (V) = 20V
I_D = 12.6A (V_GS = 4.5V)
R_DS(ON) < 13mΩ (V_GS = 4.5V)
R_DS(ON) < 17mΩ (V_GS = 2.5V)
R_DS(ON) < 26mΩ (V_GS = 1.8V)
D
Top View
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8
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7
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G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
12.6
10
40
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
30
65
40
80
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
20
25
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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