AON2801 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AON2801
Dual P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON2801/L uses advanced trench technology to provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. AON2801 and AON2801L are electrically identical.
-RoHS Compliant
-Halogen Free*
Features
V_DS (V) = -20V
I_D = -3A
(V_GS = -4.5V)
R_DS(ON) < 120mΩ (V_GS = -4.5V)
R_DS(ON) < 160mΩ (V_GS = -2.5V)
R_DS(ON) < 200mΩ (V_GS = -1.8V)
DFN 2x2 Package
S1 G1 D2
D1
D2
D1 G2 S2
Top
Bottom
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain ^TA^=25°C
Current^A
T_A=70°C
Pulsed Drain Current ^C
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
P_DSM
T_J, T_STG
G1
G2
S1
Maximum
-20
±8
-3
-2.3
-15
1.5
0.95
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^B
Maximum Junction-to-Ambient ^B
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
35
65
t ≤ 10s
Steady-State
R_θJA
120
175
Max
45
85
155
235
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
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