AON2800 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V Dual N-Channel MOSFET

AON2800
20V Dual N-Channel MOSFET
General Description
The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R _{. DS(ON) This device is ideal for load switch and battery protection applications.}
Features
V_DS
I_D (at V_GS=4.5V)
R_DS(ON) (at V_GS=4.5V)
R_DS(ON) (at V_GS=2.5V)
20V
4.5A
< 47mΩ
< 65mΩ
DFN 2x2 Package
S1 G1 D2
D1
Pin 1
Pin 1
Top
D1 G2 S2
Bottom
G1
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
20
±8
4.5
3.8
24
1.5
0.95
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
35
65
Maximum Junction-to-Ambient ^B
Maximum Junction-to-Ambient ^B
t ≤ 10s
Steady-State
R_θJA
120
175
Max
45
85
155
235
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
1/5
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