AON2701 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AON2701
P-Channel Enhancement Mode Field
Effect Transistor with Schottky Diode
General Description
The AON2701/L uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. A
Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or
for DC-DC conversion applications. AON2701 and AON2701L are electrically identical.
-RoHS Compliant
-Halogen Free*
Features
V_DS (V) = -20V
I_D = -3A
(V_GS = -4.5V)
R_DS(ON) < 120mΩ (V_GS = -4.5V)
R_DS(ON) < 160mΩ (V_GS = -2.5V)
R_DS(ON) < 200mΩ (V_GS = -1.8V)
DFN 2x2 Package
A
NC D
D
A
K
D
G
Top
KG S
Bottom
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^A
Pulsed Drain Current^B
Schottky reverse voltage
Continuous Forward Current^A
Pulsed Forward Current^B
V_DS
V_GS
T_A=25°C
T_A=70°C
I_D
I_DM
V_KA
T_A=25°C
T_A=70°C
I_F
I_FM
Power Dissipation
Junction and Storage Temperature Range
T_A=25°C
T_A=70°C
P_D
T_J, T_STG
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Symbol
R_θJA
R_θJA
S
K
MOSFET
-20
±8
-3
-2.3
-15
1.5
0.95
-55 to 150
Typ
35
65
36
67
Schottky
20
2.5
1.5
15
1.45
0.92
-55 to 150
Max
45
85
47
87
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
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