AON2420 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V N-Channel AlphaMOS

AON2420
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V_GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Features
DS
D ^{(at V}GS^=10V)
R_DS(ON) (at V_GS =10V)
R_DS(ON) (at V_GS =4.5V)
30V
8A
< 11.7mΩ
< 17.5mΩ
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_A=25°C
T_A=100°C
I_D
Pulsed Drain Current ^C
I_DM
V_DS Spike
100ns
V_SPIKE
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±20
8
6
32
36
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
37
66
Max
45
80
Units
V
V
A
V
W
°C
Units
°C/W
°C/W
1/5
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