AON2410 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AON2410
30V N-Channel MOSFET
General Description
The AON2410 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R _{. DS(ON) This device is ideal for load switch and battery protection applications.}
Features
V_DS
I_D (at V_GS=4.5V)
R_DS(ON) (at V_GS = 4.5V)
R_DS(ON) (at V_GS = 2.5V)
30V
8A
< 21mΩ
< 28mΩ
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±12
8
6
32
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
37
66
Max
45
80
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
1/5
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