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AON2408 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V N-Channel MOSFET
AON2408
20V N-Channel MOSFET
General Description
The AON2408 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
Features
VDS
20V
ID (at VGS=4.5V)
8A
RDS(ON) (at VGS =4.5V)
< 14.5mΩ
RDS(ON) (at VGS =2.5V)
< 19mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TA=25°C
TA=100°C
ID
Pulsed Drain Current C
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
8
6
32
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
37
66
Max
45
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
1/5
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