AOL1712 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOL1712
N-Channel Enhancement Mode Field
Effect Transistor
General Description
SRFET ^TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky
diode to provide excellent R_DS(ON),and low gate charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose applications.
Features
V_DS (V) = 30V
I_D =65A
R_DS(ON) < 4.2mΩ
R_DS(ON) < 5.5mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
Ultra SO-8^TM Top View
D
D
Bottom tab
connected to
G
S
G
drain
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^{B, H}
T_C=100°C
Pulsed Drain Current ^C
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
Avalanche Current ^C
Repetitive avalanche energy L=0.3mH ^C
T_C=25°C
Power Dissipation ^B T_C=100°C
T_A=25°C
Power Dissipation ^A T_A=70°C
I_D
I_DM
I_DSM
I_AR
E_AR
P_D
P_DSM
Junction and Storage Temperature Range T_J, T_STG
SRFET ^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Maximum
30
±12
65
65
80
16
12
38
217
100
50
2.1
1.3
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
19.6
50
25
60
Maximum Junction-to-Case ^D
Steady-State
R_θJC
1
1.5
Units
°C/W
°C/W
°C/W
1/6
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