AOL1401 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AOL1401
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is
ESD protected.
Features
V_DS (V) = -38V
I_D = -85A
R_DS(ON) < 8.5mΩ (V_GS = -20V)
R_DS(ON) < 10mΩ (V_GS = -10V)
Ultra SO-8^TM Top View
D
Bottom tab
connected to
drain
S
G
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current ^G
T_A=70°C
I_DSM
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-38
±25
-85
-62
-120
-12
-10
100
50
2.08
1.3
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
21
48
25
60
Maximum Junction-to-Case ^B
Steady-State
R_θJC
1
1.5
Units
V
V
A
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn