AOK20S60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V 20A a MOS Power Transistor

AOK20S60
600V 20A α MOS ^TM Power Transistor
General Description
The AOK20S60 has been fabricated using the advanced αMOS^TM high voltage process that is designed to deliver
high levels of performance and robustness in switching applications.By providing low R_DS(on), Q_g and E_{OSS along with}
guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supplydesigns.
Features
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
700V
80A
0.199Ω
20nC
4.9µJ
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt ^H
dv/dt
Junction and Storage Temperature Range
T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
Maximum Junction-to-Case
R_θJC
AOK20S60
600
±30
20
14
80
3.4
23
188
266
2.1
100
20
-55 to 150
300
AOK20S60
40
0.5
0.47
G
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W