AOI7N65 Datasheet, PDF (1/6 Pages) –

AOD7N65/AOI7N65
650V,7A N-Channel MOSFET
General Description
The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
750V@150℃
7A
< 1.56Ω
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^H
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
Maximum
650
±30
7
4.3
23
3.1
144
288
5
178
1.4
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
45
-
0.5
Maximum
55
0.5
0.7
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
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