AOI468 Datasheet, PDF (1/6 Pages) –

AOD468/AOI468
300V,11.5A N-Channel MOSFET
Genera^Gl ^eD^nee^ras^lc^Dr^ei^sp^ct^rii^po^tin^on
The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in ^{popular AC-DC applications.By providing low R , DS(on) C iss}
and C rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100% UIS Tested!
100% R_g Tested!
350V@150℃
11.5A
<0.42Ω
D
G
S
Absolute Maximum Ratings TA =25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^H
E_AS
Peak diode recovery dv/dt
dv/dt
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
Maximum
300
±30
11.5
8.3
29
3.8
216
430
5
150
1
-50 to 175
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
45
-
0.7
Maximum
55
0.5
1
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
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