AOI4185 Datasheet, PDF (1/6 Pages) –

AOD4185/AOI4185
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD4185/AOI4185 uses advanced trench technology to provide excellent R_DS(ON) and low gate
charge. With the excellent thermal resistance of the _{DPAK/IPAK package, this device is well suited for high}
current applications.
Features
V_DS (V) = -40V
I_D = -40A
R_DS(ON) < 15mΩ
R_DS(ON) < 20mΩ
(V_GS = -10V)
(V_GS = -10V)
(V_GS = -4.5V)
D
G
S
Absolute Maximum Ratings T_C=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^B,H
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
Power Dissipation ^B
T_C=25°C
T_C=100°C
P_D
Power Dissipation ^A
T_A=25°C
T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-40
±20
-40
-31
-115
-42
88
62.5
31
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A,G
Maximum Junction-to-Ambient ^A,G
t ≤ 10s
Steady-State
R_θJA
15
41
Maximum Junction-to-Case ^D,F
Steady-State
R_θJC
2
Max
20
50
2.4
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
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