AOI409 Datasheet, PDF (1/6 Pages) Inchange Semiconductor Company Limited – isc P-Channel MOSFET Transistor

AOD409/AOI409
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD/I409 uses advanced trench technology to provide excellent R_DS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
high current load applications.
Features
V_DS (V) = -60V
I_D = -26A (V_GS = -10V)
R_DS(ON) < 40mΩ (V_GS = -10V) @ -20A
R_DS(ON) < 55mΩ (V_GS = -4.5V)
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current ^G
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range T_J, T_STG
Maximum
-60
±20
-26
-18
-60
-26
33.8
60
30
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
16.7
40
25
50
Maximum Junction-to-Case ^C
Steady-State
R_θJC
1.9
2.5
G
S
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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