AOI208 Datasheet, PDF (1/6 Pages) –

AOD208/AOI208
30V N-Channel MOSFET
General Description
The AOD208/AOI208 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are minimized due to an extremely low combination of
R_DS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
30V
54A
< 4.4mΩ
< 6.5mΩ
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Maximum
30
±20
54
42
200
18
14
38
72
62
31
2.5
1.6
-55 to 175
Typ
Max
15
20
41
50
2
2.4
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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