AOI11S60 Datasheet, PDF (1/7 Pages) –

AOD11S60/AOI11S60
600V 11A α MOS ^TM Power Transistor
General Description
The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOS^TM high voltage process that is
designed to deliver high levels of performance and robustness in switching applications.
By providing low R_DS(on), Q_g and E_OSS along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
700V
45A
0.399Ω
11nC
2.7µJ
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^H
E_AS
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
dv/dt
Junction and Storage Temperature Range
T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^K
T_L
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
R_θJA
R_θCS
R_θJC
Maximum
600
±30
11
8.5
45
2
60
120
208
1.67
100
20
-55 to 150
300
Typical
45
--
0.45
Maximum
55
0.5
0.6
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
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