AOD8N25 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 250V,8A N-Channel MOSFET

AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
General Description
The AOD8N25 & AOI8N25 have been fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
300V@150℃
8A
< 0.56Ω
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Single pulsed avalanche energy ^H
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AS
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
Maximum
250
±30
8
5
16
2.1
132
5
78
0.63
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
45
-
1.3
Maximum
55
0.5
1.6
Units
V
V
A
A
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
1/6
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