AOD6N50 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 500V,5.3A N-Channel MOSFET

AOD6N50
500V,5.3A N-Channel MOSFET
General Description
The AOD6N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC ^{applications.By providing low R}DS(on)^{, C}iss ^{and C}rss ^along
with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply
designs.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
600V@150℃
5.3A
< 1.4Ω
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain
Current^B
T_C=25°C
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^H
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_J, T_STG
T_L
Maximum
500
±30
5.3
3.3
17
2.8
118
235
5
104
0.83
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,G
Maximum Case-to-sink ^A
Maximum Junction-to-Case^D,F
Symbol
R_θJA
R_θCS
R_θJC
Typical
43
-
1
Maximum
55
0.5
1.2
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
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