AOD609 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOD609
Complementary Enhancement
Mode Field Effect Transistor
General Description
The AOD609 uses advanced trench technology MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
n-channel
V_DS (V) = 40V, I_D = 12A (V_GS=10V)
R_DS(ON)< 30mΩ (V_GS=10V)
R_DS(ON)< 40mΩ (V_GS=4.5V)
p-channel
V_DS (V) = -40V, I_D = -12A (V_GS=-10V)
R_DS(ON)< 45mΩ (VGS= -10V)
R_DS(ON)< 66mΩ (VGS= -4.5V)
Top View
Drain Connected to
Tab
D1/D2
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
40
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_C=25°C
12
Current ^B,H
T_C=100°C
I_D
12
Pulsed Drain Current ^B
I_DM
30
Avalanche Current ^C
I_AR
14
Repetitive avalanche energy L=0.1mH^C
E_AR
9.8
Power Dissipation
T_C=25°C
T_C=100°C
P_D
27
14
Power Dissipation
T_A=25°C
T_A=70°C
2
P_DSM
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 175
Max p-channel
-40
±20
-12
-12
-30
-20
20
30
15
2
1.3
-55 to 175
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A,D
t ≤ 10s
Maximum Junction-to-Ambient ^A,D
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Maximum Junction-to-Ambient ^A,D
t ≤ 10s
Maximum Junction-to-Ambient ^A,D
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJC
R_θJA
R_θJC
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
17.4
50
4
16.7
50
3.5
Max
25
60
5.5
25
60
5
Units
V
V
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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