AOD607 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AOD607
Complementary Enhancement
Mode Field Effect Transistor
General Description
The AOD607 uses advanced trench technology MOSFETs to provide excellent R_DS(ON) and low gate charge.
The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
n-channel
p-channel
V_DS (V) = 30V
-30V
I_D = 12A (V_GS=10V)
-12A (V_GS = -10V)
R_DS(ON)
R_DS(ON)
< 25 mΩ (V_GS=10V)
< 37 mΩ (V_GS = -10V)
< 34 mΩ (V_GS=4.5V) < 62 mΩ (V_GS = -4.5V)
D1/D2
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max n-channel Max p-channel
Drain-Source Voltage
V_DS
30
-30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain T_C=25°C
12
-12
Current ^G
T_C=100°C
I_D
9.4
-9.4
Pulsed Drain Current ^C
I_DM
40
-40
Avalanche Current ^C
I_AR
18
-18
Repetitive avalanche energy L=0.1mH ^C
E_AR
40
40
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
25
25
12.5
12.5
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
2.1
1.3
2.1
1.3
Junction and Storage Temperature Range T_J, T_STG
-55 to 175
-55 to 175
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
Symbol Device Typ
R_θJA
n-ch
n-ch
19
47
Max
23
60
Maximum Junction-to-Case ^B
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Steady-State
t ≤ 10s
Steady-State
R_θJC
n-ch
4.5
6
R_θJA
p-ch
p-ch
19
47
23
60
Maximum Junction-to-Case ^B
Steady-State
R_θJC
p-ch
4.5
6
Units
V
V
A
A
mJ
W
W
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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