AOD603A Datasheet, PDF (1/11 Pages) Alpha & Omega Semiconductors – 60V Complementary MOSFET

AOD603A
60V Complementary MOSFET
General Description
The AOD603A uses advanced trench technology MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
N-Channel
V_DS= 60V
I_D= 13A (V_GS=10V)
R_DS(ON)
< 60mΩ (V_GS=10V)
< 85mΩ (V_GS=4.5V)
P-Channel
-60V
-13A (V_GS=-10V)
R_DS(ON)
< 115mΩ (V_GS=-10V)
< 150mΩ (V_GS=-4.5V)
D1
D2
G1
G2
S1
S2
N-channel
P-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max N-channel
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
Continuous Drain ^TC^=25°C
Current ^G
T_C=100°C
Pulsed Drain Current ^C
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
T_C=25°C
Power Dissipation ^B T_C=100°C
V_GS
I_D
I_DM
I_DSM
I_AS, I_AR
E_AS, E_AR
P_D
±20
12
9.5
30
3.5
3
19
18
27
13.5
T_A=25°C
Power Dissipation ^A T_A=70°C
2
P_DSM
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 175
Max P-channel
-60
±20
-12
-9.5
-30
-3
-2.5
25
31
42.5
21.5
2
1.3
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter N-channel
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
19
50
Maximum Junction-to-Case
Steady-State
R_θJC
4
Parameter P-channel
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
19
50
Maximum Junction-to-Case
Steady-State
R_θJC
2.5
Max
23
60
5.5
Max
23
60
3.5
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
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